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T2N7002BK Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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T2N7002BK Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 8 page T2N7002BK 4 5.5. 5.5. 5.5. 5.5. Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Diode forward voltage (Note 1) Symbol VDSF Test Condition ID = -115 mA, VGS = 0 V Min Typ. -0.79 Max -1.1 Unit V Note 1: Pulse measurement. 6. 6. 6. 6. Marking Marking Marking Marking 2017-11-30 Rev.2.0 ©2015-2017 Toshiba Electronic Devices & Storage Corporation |
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