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AT90S8535 Datasheet(PDF) 96 Page - ATMEL Corporation |
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AT90S8535 Datasheet(HTML) 96 Page - ATMEL Corporation |
96 / 127 page ![]() 96 AT90S/LS8535 1041H–11/01 1. Set BS to “1”. This selects high data. 2. Give WR a negative pulse. This starts programming of the data byte. RDY/BSY goes low. 3. Wait until RDY/BSY goes high to program the next byte. (See Figure 69 for signal waveforms.) The loaded command and address are retained in the device during programming. For efficient programming, the following should be considered: • The command needs only be loaded once when writing or reading multiple memory locations. • Address high byte needs only be loaded before programming a new 256-word page in the Flash. • Skip writing the data value $FF, that is, the contents of the entire Flash and EEPROM after a Chip Erase. These considerations also apply to EEPROM programming and Flash, EEPROM and signature byte reading. Figure 68. Programming the Flash Waveforms $10 ADDR. HIGH ADDR. LOW DATA LOW DATA XA1 XA0 BS XTAL1 WR RDY/BSY RESET OE 12V |
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