SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER

DN:T19705A0

https://www.microdiode.com

Rev:2019A0

Page :1

S3ABF THRU S3MBF

Features







For surface mounted applications

Low profile package

Glass Passivated Chip Junction

Easy to pick and place

Lead free in comply with EU RoHS 2011/65/EU diretives

Dimensions in inches and (millimeters)

Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere

SM

BF

0.216(5.50)

0.200(5.10)

0.048(1.20)

0.031(0.80)

0.010(0.26)

0.007(0.18)

0.051(1.30)

0.043(1.10)

0.173(4.40)

0.165(4.20)

0.086 (2.20)

0.075 (1.90)

0.146(3.70)

0.138(3.50)

Mechanical Data

Case

: JEDEC

B molded plastic body

Terminals

: Solderable per MIL-STD-750,Method 2026

Polarity

: Polarity symbol marking on body

Mounting Position

: Any

Weight

: 0.002 ounce, 0.057 grams





Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Maximum Ratings And Electrical Characteristics

Parameter

SYMBOLS

S3ABF

S3BBF

S3DBF

S3GBF

S3JBF

S3KBF

S3MBF

UNITS

Marking Code

MDD

S3AB

F

MDD

S3BB

F

MDD

S3DB

F

MDD

S3GB

F

MDD

S3JB

F

MDD

S3KB

F

MDD

S3MB

F

Maximum repetitive peak reverse voltage

50

100

200

400

600

800

1000

V

Maximum RMS voltage

35

70

140

280

420

560

700

V

Maximum DC blocking voltage

50

100

200

400

600

800

1000

V

Maximum average forward rectified current

at TL=65℃

3.0

A

Peak forward surge current

8.3ms single half sine-wave

superimposed onrated load (JEDEC Method)

80

A

Maximum instantaneous forward voltage at 3.0A

1.10

V

Maximum DC reverse current

at rated DCblocking voltage

5.0

150.0

μA

Typical junction capacitance (NOTE 1)

35.0

pF

Typical thermal resistance (NOTE 2)

45.0

℃/

W

-55 to +150

℃

Note:

1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.