EDS1232CASE datasheet(6/53 Pages) ELPIDA

Part #	EDS1232CASE

Description	128M bits SDRAM (4M words x 32 bits)

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Manufacturer	ELPIDA [Elpida Memory]

Direct Link	http://www.elpida.com/en

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6 / 53 page

EDS1232CASE

Data Sheet E0351E30 (Ver. 3.0)

6

Pin Capacitance (TA = 25°C, f = 1MHz)

Parameter

Symbol

Pins

min.

typ.

max.

Unit

Note

Input capacitance

CI1

Address

1.5

—

3.0

pF

CI2

CLK, CKE, /CS, /RAS,

/CAS, /WE, DQM

1.5

—

3.0

pF

Data input/output capacitance

CI/O

DQ

3.0

—

5.5

pF

AC Characteristics (TA = 0 to +70

°C, VDD, VDDQ = 2.5V±0.2V, VSS, VSSQ = 0V)

-1A

Parameter

Symbol

min.

max.

Unit

Note

System clock cycle time

(CL = 2)

tCK

10

—

ns

(CL = 3)

tCK

10

—

ns

CLK high pulse width

tCH

3

—

ns

CLK low pulse width

tCL

3

—

ns

Access time from CLK

tAC

—

6

ns

Data-out hold time

tOH

2

—

ns

CLK to Data-out low impedance

tLZ

0

—

ns

CLK to Data-out high impedance

tHZ

2

6

ns

Input setup time

tSI

2

—

ns

Input hold time

tHI

1

—

ns

CKE setup time (Power down exit)

tCKSP

2

—

ns

ACT to REF/ACT command period

(operation)

tRC

70



ns

(refresh)

tRC

70



ns

Active to Precharge command period

tRAS

50

120000

ns

Active command to column command (same bank) tRCD

20



ns

Precharge to active command period

tRP

20



ns

Write recovery or data-in to precharge lead time

tDPL

20



ns

Last data into active latency

tDAL

2CLK + 20ns

—

Active (a) to Active (b) command period

tRRD

20

—

ns

Mode register set cycle time

tRSC

2



CLK

Transition time (rise and fall)

tT

0.5

30

ns

Refresh period

(4096 refresh cycles)

tREF

—

64

ms

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