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EDS1232AATA-75L-E Datasheet(PDF) 35 Page - Elpida Memory |
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EDS1232AATA-75L-E Datasheet(HTML) 35 Page - Elpida Memory |
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35 / 53 page  EDS1232AATA Data Sheet E0386E40 (Ver. 4.0) 35 Write command to Read command interval: 1. Same bank, same ROW address: When the read command is executed at the same ROW address of the same bank as the preceding write command, the read command can be performed after an interval of no less than 1 clock. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed. CLK Command DQ (input) WRIT READ in A0 out B1 out B2 out B3 out B0 DQ (output) Column = A Write Column = B Read Column = B Dout /CAS Latency DQM Burst Write Mode CL = 2 BL = 4 Bank 0 WRITE to READ Command Interval (1) CLK Command DQ (input) WRIT READ in A0 out B1 out B2 out B3 out B0 DQ (output) Column = A Write Column = B Read Column = B Dout /CAS Latency in A1 DQM Burst Write Mode CL = 2 BL = 4 Bank 0 WRITE to READ Command Interval (2) 2. Same bank, different ROW address: When the ROW address changes, consecutive read commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the read command can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed (as in the case of the same bank and the same address). |
Similar Part No. - EDS1232AATA-75L-E |
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