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EDS1232AATA-75L-E Datasheet(PDF) 12 Page - Elpida Memory |
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EDS1232AATA-75L-E Datasheet(HTML) 12 Page - Elpida Memory |
12 / 53 page ![]() EDS1232AATA Data Sheet E0386E40 (Ver. 4.0) 12 Precharge command (/CS, /RAS, /WE = Low, /CAS = High) This command begins precharge operation of the bank selected by BA0 and BA1. When A10 is High, all banks are precharged, regardless of BA0 and BA1. When A10 is Low, only the bank selected by BA0 and BA1 is precharged. After this command, the Synchronous DRAM can’t accept the activate command to the precharging bank during tRP (precharge to activate command period). This command corresponds to a conventional DRAM’s /RAS rising. /WE /CAS /RAS /CS CKE CLK H Add A10 BA0, BA1 (Bank select) (Precharge select) Precharge Command Write command (/CS, /CAS, /WE = Low, /RAS = High) If the mode register is in the burst write mode, this command sets the burst start address given by the column address to begin the burst write operation. The first write data in burst mode can input with this command with subsequent data on following clocks. /WE /CAS /RAS /CS CKE CLK H Add A10 BA0, BA1 (Bank select) Col. Column Address and Write Command |
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