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EDS1232AATA-75L-E Datasheet(PDF) 1 Page - Elpida Memory

Part # EDS1232AATA-75L-E
Description  128M bits SDRAM (4M words x 32 bits)
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EDS1232AATA-75L-E Datasheet(HTML) 1 Page - Elpida Memory

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Document No. E0386E40 (Ver. 4.0)
Date Published October 2004 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2003-2004
DATA SHEET
128M bits SDRAM
EDS1232AATA (4M words
×××× 32 bits)
Description
The EDS1232AATA is a 128M bits SDRAM organized
as 1,048,576 words
× 32 bits × 4 banks. All inputs and
outputs are synchronized with the positive edge of the
clock.
It is packaged in 86-pin plastic TSOP (II).
Features
• 3.3V power supply
• Clock frequency: 166MHz (max.)
• Single pulsed /RAS
• ×32 organization
• 4 banks can operate simultaneously and
independently
• Burst read/write operation and burst read/single write
operation capability
• Programmable burst length (BL): 1, 2, 4, 8 and full
page
• 2 variations of burst sequence
 Sequential (BL = 1, 2, 4, 8, full page)
 Interleave (BL = 1, 2, 4, 8)
• Programmable /CAS latency (CL): 2, 3
• Byte control by DQM
• Refresh cycles: 4096 refresh cycles/64ms
• 2 variations of refresh
 Auto refresh
 Self refresh
• 2 types of TSOP (II) package
 Sn-Pb solder
 Lead free solder (Sn-Bi)
Pin Configurations
/xxx indicates active low signal.
(Top view)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSS
DQM1
NC
NC
CLK
CKE
A9
A8
A7
A6
A5
A4
A3
DQM3
VSS
NC
DQ31
VDDQ
DQ30
DQ29
VSSQ
DQ28
DQ27
VDDQ
DQ26
DQ25
VSSQ
DQ24
VSS
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDD
DQM0
/WE
/CAS
/RAS
/CS
A11
BA0
BA1
A10(AP)
A0
A1
A2
DQM2
VDD
NC
DQ16
VSSQ
DQ17
DQ18
VDDQ
DQ19
DQ20
VSSQ
DQ21
DQ22
VDDQ
DQ23
VDD
86-pin Plastic TSOP(II)
Address inputs
Bank select
Data input/output
Chip select
Row address strobe
Column address strobe
Write enable
A0 to A11,
BA0, BA1
DQ0 to DQ31
/CS
/RAS
/CAS
/WE
DQ mask enable
Clock enable
Clock input
Supply voltage
Ground
Supply voltage
for DQ
Ground for DQ
No connection
DQM0 to DQM3
CKE
CLK
VDD
VSS
VDDQ
VSSQ
NC


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