EBE51UD8ABFA

Data Sheet E0357E50 (Ver. 5.0)

10

Electrical Specifications

• All voltages are referenced to VSS (GND).

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Note

Voltage on any pin relative to VSS

VT

–0.5 to +2.3

V

Supply voltage relative to VSS

VDD

–0.5 to +2.3

V

Short circuit output current

IOS

50

mA

Power dissipation

PD

8

W

Operating case temperature

TC

0 to +85

°C

1

Storage temperature

Tstg

–55 to +100

°C

Note: DDR2 SDRAM component specification.

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

DC Operating Conditions (TC = 0 to +85°C) (DDR2 SDRAM Component Specification)

Parameter

Symbol

min.

typ.

max.

Unit

Notes

Supply voltage

VDD, VDDQ

1.7

1.8

1.9

V

4

VSS

0

0

0

V

VDDSPD

1.7

—

3.6

V

Input reference voltage

VREF

0.49

× VDDQ

0.50

× VDDQ 0.51 × VDDQ

V

1, 2

Termination voltage

VTT

VREF

− 0.04

VREF

VREF + 0.04

V

3

DC input logic high

VIH (DC)

VREF + 0.125



VDDQ + 0.3V

V

DC input low

VIL (DC)

−0.3



VREF – 0.125

V

AC input logic high

VIH (AC)

VREF + 0.250





V

AC input low

VIL (AC)





VREF

− 0.250

V

Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically

the value of VREF is expected to be about 0.5

× VDDQ of the transmitting device and VREF are expected

to track variations in VDDQ.

2. Peak to peak AC noise on VREF may not exceed

±2% VREF (DC).

3. VTT of transmitting device must track VREF of receiving device.

4. VDDQ must be equal to VDD.