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PMZB550UNE Datasheet(PDF) 4 Page - Nexperia B.V. All rights reserved |
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PMZB550UNE Datasheet(HTML) 4 Page - Nexperia B.V. All rights reserved |
4 / 15 page © Nexperia B.V. 2017. All rights reserved Nexperia PMZB550UNE 30 V, N-channel Trench MOSFET PMZB550UNE All information provided in this document is subject to legal disclaimers. Product data sheet 25 March 2015 4 / 15 aaa-017176 10-1 10-2 1 10 ID (A) 10-3 VDS (V) 10-1 102 10 1 Limit RDSon = VDS/ID DC; Tsp = 25 °C DC; Tamb = 25 °C; drain mounting pad 1 cm2 tp = 10 µs tp = 100 µs tp = 1 ms tp = 100 ms tp = 10 ms IDM = single pulse Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - 350 405 K/W Rth(j-a) thermal resistance from junction to ambient in free air [2] - 270 310 K/W Rth(j-sp) thermal resistance from junction to solder point - 65 75 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. |
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