K4S641632H datasheet(7/14 Pages) SAMSUNG

Part #	K4S641632H

Description	64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

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Manufacturer	SAMSUNG [Samsung semiconductor]

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SDRAM 64Mb H-die (x4, x8, x16)

CMOS SDRAM

Rev. 1.3 August 2004

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Voltage on any pin relative to VSS

VIN, VOUT

-1.0 ~ 4.6

V

Voltage on VDD supply relative to VSS

VDD, VDDQ

-1.0 ~ 4.6

V

Storage temperature

TSTG

-55 ~ +150

°C

Power dissipation

PD

1W

Short circuit current

IOS

50

mA

Permanent device damage may occur if "ASOLUTE MAXIMUM RATINGS" are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Note :

DC OPERATING CONDITIONS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70

°C)

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

VDD, VDDQ

3.0

3.3

3.6

V

Input logic high voltage

VIH

2.0

3.0

VDD+0.3

V

1

Input logic low voltage

VIL

-0.3

0

0.8

V

2

Output logic high voltage

VOH

2.4

-

V

IOH = -2mA

Output logic low voltage

VOL

--

0.4

V

IOL = 2mA

Input leakage current

ILI

-10

-

10

uA

3

1. VIH (max) = 5.6V AC.The overshoot voltage duration is

≤ 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is

≤ 3ns.

3. Any input 0V

≤ VIN ≤ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

Notes :

CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)

Symbol

Min

Max

Unit

Note

Clock

CCLK

2.5

4.0

pF

1

RAS, CAS, WE, CS, CKE, DQM

CIN

2.5

5.0

pF

2

Address

CADD

2.5

5.0

pF

2

DQ0 ~ DQ3

COUT

4.0

6.5

pF

3

1. -75 only specify a maximum value of 3.5pF

2. -75 only specify a maximum value of 3.8pF

3. -75 only specify a maximum value of 6.0pF

Notes :

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K4S641632H Datasheet(PDF) 7 Page - Samsung semiconductor

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