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M5M5256DFP-10VLL-I Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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M5M5256DFP-10VLL-I Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
3 / 7 page MITSUBISHI LSIs 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM MITSUBISHI ELECTRIC M5M5256DFP,VP,RV -10VLL-I,-12VLL-I,-15VLL-I, -10VXL-I,-12VXL-I,-15VXL-I '97.4.7 3 ABSOLUTE MAXIMUM RATINGS CAPACITANCE (Ta=-40~85°C, Vcc=2.7~3.6V, unless otherwise noted) Symbol Parameter Test conditions pF pF Unit Max 6 8 Typ Min Limits VI=GND, VI=25mVrms, f=1MHz VO=GND,VO=25mVrms, f=1MHz Input capacitance Output capacitance CI CO DC ELECTRICAL CHARACTERISTICS (Ta=-40~85°C, Vcc=2.7~3.6V, unless otherwise noted) Symbol Parameter V V V Limits Test conditions Unit V uA * -3.0V in case of AC ( Pulse width ≤ 30ns ) Note 0: Direction for current flowing into an IC is positive (no mark). 1: Typical value is one at Ta = 25°C. 2: CI, CO are periodically sampled and are not 100% tested. mA * -3.0V in case of AC ( Pulse width ≤ 30ns ) uA uA mA V Active supply current (AC, MOS level ) Icc1 Icc2 Stand-by current Icc4 VIH High-level input voltage VIL Low-level input voltage IO Output current in off-state Icc3 Stand-by current VOH1 High-level output voltage 1 IOH=-0.5mA VOH2 High-level output voltage 2 IOH=-0.05mA VOL Low-level output voltage IOL=1mA II Input current VI=0~Vcc Vcc +0.3 0.6 2.0 -0.3* 2.4 0.33 0.4 20 11 24 4.8 Vcc -0.5 ±1 3 1.5 -VLL -VXL Max Typ Min Parameter Supply voltage Input voltage Output voltage Power dissipation Operating temperature Storage temperature Unit V V V mW °C Conditions With respect to GND Ta=25°C 700 -40~85 -65~150 Ratings Symbol Vcc VI VO Pd Topr Tstg -0.3*~4.6 -0.3*~Vcc+0.3 0~Vcc (Max 4.6) /S=VIH,other inputs=0~Vcc /S ≥Vcc-0.2V, other inputs=0~Vcc /S=VIH or or /OE=VIH, VI/O=0~Vcc 1MHz mA /S=VIL, other inputs=VIH or VIL Output-open Min. cycle Active supply current (AC, TTL level ) /S ≤0.2V, Other inputs<0.2V or >Vcc-0.2V Output-open Min. cycle °C ±1 0.05 Min. cycle 20 11 3 1.5 1MHz Min. cycle |
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