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2SC5859 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC5859 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page 2SC5859 2004-5-18 3 VCE(sat) – IC 0.01 1 1 0.1 10 10 100 8 6 10 IC/IB = 4 Common emitter Tc = −25℃ Collector current IC (A) Collector current IC (A) VCE (sat) – IC 100 1 10 0.1 0.01 10 1 Common emitter Tc = 25℃ 8 6 10 IC/IB = 4 Collector current IC (A) VCE (sat) – IC 10 0.1 0.01 1 100 1 10 Common emitter Tc = 100℃ 8 6 10 IC/IB = 4 Base current IB (A) VCE – IB 0 8 6 2 4 10 16 Ic = 18 A Common emitter Tc = −25℃ 7 5 0 1 2 4 3 8 9 10 12 14 Base current IB (A) VCE – IB Common emitter Tc = 25℃ 0 8 6 2 4 10 5 0 1 2 4 3 16 Ic = 18 A 7 8 9 10 12 14 Base current IC (A) VCE – IB 5 0 1 2 4 3 Common emitter Tc = 100℃ 0 8 6 2 4 10 16 Ic = 18 A 7 8 9 10 12 14 |
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