C106DG datasheet(4/6 Pages) ONSEMI

Part #	C106DG

Description	Sensitive Gate Silicon Controlled Rectifiers

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Manufacturer	ONSEMI [ON Semiconductor]

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C106 Series

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4

DC

JUNCTION TEMPERATURE ≈ 110°C

100

10

20

30

40

70

110

90

3.6

80

0

.4

.8

1.6

1.2

2.0

2.4

3.2

60

4.0

IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)

HALF SINE WAVE

RESISTIVE OR INDUCTIVE LOAD.

50 to 400 Hz

50

6

4

2

0

8

0

10

2.8

3.6

.4

.8

1.6

1.2

2.0

2.4

3.2

4.0

2.6

IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)

HALF SINE WAVE

RESISTIVE OR INDUCTIVE LOAD

50 TO 400Hz.

Figure 1. Average Current Derating

Figure 2. Maximum On−State Power Dissipation

1

100

95

−40 −25 −10

20

535

50

80

10

110

TJ, JUNCTION TEMPERATURE (°C)

65

Figure 3. Typical Gate Trigger Current versus

Junction Temperature

Figure 4. Typical Holding Current versus

Junction Temperature

0.9

0.2

0.3

0.4

0.7

1.0

0.8

95

−45 −25 −10

20

535

50

80

0.6

110

TJ, JUNCTION TEMPERATURE (°C)

0.5

65

Figure 5. Typical Gate Trigger Voltage versus

Junction Temperature

Figure 6. Typical Latching Current versus

Junction Temperature

10

1000

95

−40 −25 −10

20

535

50

80

100

110

TJ, JUNCTION TEMPERATURE (°C)

65

10

1000

95

−40 −25 −10

20

535

50

80

100

110

TJ, JUNCTION TEMPERATURE (°C)

65

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