GLT41116 datasheet(7/16 Pages) ETC1

Part #	GLT41116

Description	64k x 16 CMOS Dynamic RAM with Fast Page Mode

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G-LINK Technology

GLT41116

July 1998 (Rev. 1)

CLK

CKE

CE

R/W

tKHKL

Figure 2. Read/Write Timing

ADV/LD

BWn

ADDRESS

D/Q

A1

A2

A3

A4

A5

A6

A7

12

3

tKLKH

tKHKH

4

56789

10

tKHEX

tEVKH

tKHCX

tCVKH

tKHAX

tAVKH

tKHDX

tDVKH

D (A1)

D (A2)

D (A2+1)

Q (A3)

tKHQV

tKHQX1

tKHQX

Q (A4+1)

Q (A4)

D (A5)

D (A6)

D (A7)

OE

tGHQZ

tGLQX

tGLQV

tKHQZ

tKHQX

WRITE D(A1)

WRITE D(A2)

BURST WRITE

D(A1+1)

READ Q(A3)

READ Q(A4)

BURST READ

Q(A4+1)

WRITE D(A5)

READ Q(A6)

WRITE D(A7)

DESELECT

NOTE:

1. For this waveform, ZZ is tied LOW.

2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BURST operations are optional.

3. CE represents three signals. When CE = 0, it represents CE = 0, CE2 = 0, CE2 = 1.

4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most recent data may be from the input data register.

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