BDV65B BDV64B

3

Motorola Bipolar Power Transistor Device Data

10K

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (A)

0.1

1

1K

4

10

NPN

PNP

VCE = 4 V

IC, COLLECTOR CURRENT (A)

0.1

1

10

Figure 3. DC Current Gain

10K

1K

1

10

0.1

IC, COLLECTOR CURRENT (A)

10

0.1

VBE(sat) @ IC/IB = 250

Figure 4. “On” Voltages

1

1

10

IC, COLLECTOR CURRENT (A)

0.1

1

Figure 5. “On” Voltages

0.1

10

1

VBE(sat) @ IC/IB = 250

Figure 6. Active Region Safe Operating Area

100

1

VCE, COLLECTOR–EMITTER VOLTAGE (V)

50

20

5

10

50

100

SECONDARY BREAKDOWN

LIMITED @ TJ v 150°C

THERMAL LIMIT @ TC = 25°C

BONDING WIRE LIMIT

BDV65B, BDV64B

dc

5.0 ms 1.0 ms

100

µs

10

1

30

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150_C, TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in Fig-

ure 7. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.