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BDV65B Datasheet(PDF) 2 Page - ON Semiconductor |
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BDV65B Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page BDV65B BDV64B 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) VCEO(sus) 100 — Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO — 1.0 mAdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO — 0.4 mAdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0, TC = 150_C) ICBO — 2.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 5.0 mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) hFE 1000 — — Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.02 Adc) VCE(sat) — 2.0 Vdc Base–Emitter Saturation Voltage (IC = 5.0 Adc, VCE = 4.0 Vdc) VBE(on) — 2.5 Vdc |
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