1

Motorola Bipolar Power Transistor Device Data

Complementary Silicon Plastic

Power Darlingtons

. . . for use as output devices in complementary general purpose amplifier applica-

tions.

• High DC Current Gain

HFE = 1000 (min.) @ 5 Adc

• Monolithic Construction with Built–in Base Emitter Shunt Resistors

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

100

Vdc

Collector–Base Voltage

VCB

100

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

— Peak

IC

10

20

Adc

Base Current

IB

0.5

Adc

Total Device Dissipation

@ TC = 25_C

Derate above 25

_C

PD

125

1.0

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

1.0

_C/W

1.0

0.8

0

0

25

50

100

125

150

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

75

0.4

0.6

0.2

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BDV65B/D

BDV65B

BDV64B

DARLINGTONS

10 AMPERES

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60 – 80 – 100 – 120 VOLTS

125 WATTS

CASE 340D–02

SOT 93, TO–218 TYPE

NPN

PNP

REV 8