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2SC5200 Datasheet(PDF) 3 Page - ON Semiconductor

Part # 2SC5200
Description  NPN Epitaxial Silicon Transistor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SC5200 Datasheet(HTML) 3 Page - ON Semiconductor

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© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2SC5200/FJL4315 Rev. C
2
Electrical Characteristics* T
a=25°C unless otherwise noted
* Pulse Test: Pulse Width=20
µs, Duty Cycle≤2%
Ordering Information
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC=5mA, IE=0
250
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=10mA, RBE=∞
250
V
BVEBO
Emitter-Base Breakdown Voltage
IE=5mA, IC=0
5
V
ICBO
Collector Cut-off Current
VCB=230V, IE=0
5.0
µA
IEBO
Emitter Cut-off Current
VEB=5V, IC=0
5.0
µA
hFE1
DC Current Gain
VCE=5V, IC=1A
55
160
hFE2
DC Current Gain
VCE=5V, IC=7A
35
60
VCE(sat)
Collector-Emitter Saturation Voltage
IC=8A, IB=0.8A
0.4
3.0
V
VBE(on)
Base-Emitter On Voltage
VCE=5V, IC=7A
1.0
1.5
V
fT
Current Gain Bandwidth Product
VCE=5V, IC=1A
30
MHz
Cob
Output Capacitance
VCB=10V, f=1MHz
200
pF
Part Number
Marking
Package
Packing Method
Remarks
2SC5200RTU
C5200R
TO-264
TUBE
hFE1 R grade
2SC5200OTU
C5200O
TO-264
TUBE
hFE1 O grade
FJL4315RTU
J4315R
TO-264
TUBE
hFE1 R grade
FJL4315OTU
J4315O
TO-264
TUBE
hFE1 O grade


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