BDX87C datasheet(2/4 Pages) STMICROELECTRONICS

Part #	BDX87C

Description	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.45

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 100 V

T case = 150

oC

0.5

5

mA

ICEO

Collector Cut-off

Current (IB = 0)

VCB = 50 V

1

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

1mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

100

V

VCE(sat)

∗ Collector-emitter

Saturation Voltage

IC = 6 A

IB = 24 mA

IC = 12 A

IB = 120 mA

2

3

V

VBE(sat)

∗ Base-emitter

Saturation Voltage

IC = 12 A

IB =120 mA

4

V

VBE

∗

Base-emitter Voltage

IC = 6 A

VCE = 3 V

2.8

V

hFE

∗

DC Current Gain

IC = 5 A

VCE = 3 V

IC = 6 A

VCE = 3 V

IC = 12 A

VCE = 3 V

1000

750

100

18000

VF

∗

Parallel-diode Forward

Voltage

IF = 3 A

IF = 8 A

2.5

1.8

V

hfe

∗

Small SignalCurrent

Gain

IC = 5 A

VCE = 3 V

f = 1MHz

25

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

BDX87C-BDX88C

2/4

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