SAMWIN
SW2N60
REV0.2
04.11.1
Features
N-Channel MOSFET
BV
DSS (Minimum)
R
DS(ON) (Maximum)
I
D
Qg (Typical)
P
D (@TC=25 ℃)
General Description
This power MOSFET is produced in CHMC with
advanced VDMOS technology of SAMWIN. This
technology enable power MOSFET to have better
characteristics, such as fast switching time, low on
resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is
usually used at high efficient DC to DC converter
block and SMPS. It’s typical application is TV and
monitor.
Absolute Maximum Ratings
Value
Units
TO-220
TO-251(2)
V
DSS
Drain to Source Voltage
600
V
Continuous Drain Current (@Tc=25℃)2.0
1.8
A
Continuous Drain Current (@Tc=100℃)
1.67
1.47
7.2
4.2
42
0.34
A
I
DM
Drain Current Pulsed
(Note 1)
8.0
A
V
GS
Gate to Source Voltage
±30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
110
mJ
E
AR
Repetitive Avalanche Energy
(Note 1)
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.0
V/ns
Total Power Dissipation (@Tc=25℃)
50
W
Derating Factor above 25℃
0.4
W/℃
T
STG,TJ
Operating junction temperature &Storage temperature
-55~+150
℃
T
L
Maximum Lead Temperature for soldering purpose, 1/8 from
Case for 5 seconds.
300
℃
P
D
I
D
Symbol
Parameter
Thermal Characteristics
℃/ W
62.5
Thermal Resistance, Junction-to-Ambient
Max
RθJA
℃/ W
0.5
Thermal Resistance, Case-to-Sink
TYP.
RθCS
℃/ W
2.9
2.4
Thermal Resistance, Junction-to-Case
Max
RθJC
TO-251(2)
TO-220
Units
Value
Parameter
Symbol
1/6
: 600 V
: 5.0 ohm
: 2.0 A
: 16 nc
: 50 W
TO-252
TO-220
G
S
D
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