9.0A，200V

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

4820N

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS

6. Electrical characteristics

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Off Characteristics

Drain-source breakdown voltage

200

-

-

V

Drain-to-source leakage current

-

-

1

μA

-

-

100

μA

Gate-to-source leakage current

-

-

100

nA

-

-

-100

nA

On characteristics

Gate threshold voltage

μA

2.0

-

4.0

V

Static drain-source on-resistance

-

260

400

mΩ

Forward transconductance

gfs

-

9.5

-

S

Dynamic characteristics

Input capacitance

-

670

-

pF

Output capacitance

-

78

-

Reverse transfer capacitance

-

30

-

Total gate charge

-

16

-

nC

Gate-source charge

-

3

-

Gate-drain (Miller)charge

-

6

-

Resistive switching characteristics

Turn-on delay time

-

6.8

-

nS

Rise time

-

5.8

-

Turn-off delay time

-

20

-

Fall time

-

5

-

Source-drain body diode characteristics

Diode forward voltage

-

-

1.5

V

Integral PN-diode in MOSFET

-

-

9

A

-

-

36

A

Reverse recovery time

-

155

-

ns

Reverse recovery charge

-

380

-

nC

°C to 150°C

2. Pulse width<380

μs; duty cycle<2%.

3.KIA finished product specifications please customer before placing order, should obtain the latest

version of the finished product specifications.

3 of6

Rev 1.1 May 2016