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4820N Datasheet(PDF) 2 Page - KIA Semiconductor Technology |
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4820N Datasheet(HTML) 2 Page - KIA Semiconductor Technology |
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2 / 6 page  9.0A，200V N-CHANNEL MOSFET KIA SEMICONDUCTORS 4820N KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolute maximum ratings (TC=25 ºC , unless otherwise specified) Parameter Symbol Ratings Units Drain-source voltage VDSS 200 V Gate-source voltage VGSS ±20 V Continuous drain currenet ID 9.0 A Pulsed drain current atVGS=10V IDM 36 A Single pulse Avalanche energy EAS 300 mJ Power dissipation PD 83 W Derating factor above 25 °C 0.59 W/ °C Soldering temperature distance of 1.6mm from case for 10seconds TL 300 °C Operating and storage temperature range TJ &TSTG -55~+150 °C Caution: Stresses greater than those listed in the “ Absolute maximum ratings” may cause permanent damage to the device. 5. Thermal characteristics Parameter Symbol Rating Unit TO-220 TO-252 Thermal resistance,Junction-to-case θJC 1.5 1.5 ºC/W Thermal resistance,Junction-to-ambient θJA 62 75 ºC/W 2 of6 Rev 1.1 May 2016 |
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Similar Description - 4820N |
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