1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Switching Diode

This switching diode has the following features:

• Low Leakage Current Applications

• Medium Speed Switching Times

• Available in 8 mm Tape and Reel

Use BAS116LT1 to order the 7 inch/3,000 unit reel

Use BAS116LT3 to order the 13 inch/10,000 unit reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

VR

75

Vdc

Peak Forward Current

IF

200

mAdc

Peak Forward Surge Current

IFM(surge)

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

DEVICE MARKING

BAS116LT1 = JV

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (IBR = 100 µAdc)

V(BR)

75

—

Vdc

Reverse Voltage Leakage Current (VR = 75 Vdc)

IR

—

—

5.0

80

nAdc

Forward Voltage (IF = 1.0 mAdc)

VF

—

—

—

—

900

1000

1100

1250

mV

Diode Capacitance (VR = 0 V, f = 1.0 MHz)

CD

—

2.0

pF

Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)

trr

—

3.0

µs

1. FR– 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by BAS116LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BAS116LT1

Motorola Preferred Device

1

2

3

CASE 318 – 08, STYLE 8

SOT– 23 (TO – 236AB)

3

CATHODE

1

ANODE

REV 1