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HY5DU12822B Datasheet(PDF) 30 Page - Hynix Semiconductor

Part # HY5DU12822B
Description  512Mb DDR SDRAM
Download  37 Pages
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY5DU12822B Datasheet(HTML) 30 Page - Hynix Semiconductor

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Rev. 0.1 / May 2004
30
HY5DU12422B(L)TP
HY5DU12822B(L)TP
HY5DU121622B(L)TP
AC Overshoot/Undershoot Specification for Address and Control Pins
This specification is intended for devices with no clamp protection and is guaranteed by design
Overshoot/Undershoot Specification for Data, Strobe, and Mask Pins
Parameter
Specification
DDR333
DDR200/266
Maximum peak amplitude allowed for overshoot (See Figure 1):
1.5V
1.5V
Maximum peak amplitude allowed for undershoot (See Figure 1):
1.5V
1.5V
The area between the overshoot signal and VDD must be less than or equal to (See Figure 1):
4.5V - ns
4.5V - ns
The area between the undershoot signal and GND must be less than or equal to (See Figure 1):
4.5V - ns
4.5V - ns
Parameter
Specification
DDR333
DDR200/266
Maximum peak amplitude allowed for overshoot (See Figure 2):
1.2V
1.2V
Maximum peak amplitude allowed for undershoot (See Figure 2):
1.2V
1.2V
The area between the overshoot signal and VDD must be less than or equal to (See Figure 2):
2.4V - ns
2.4V - ns
The area between the undershoot signal and GND must be less than or equal to (See Figure 2):
2.4V - ns
2.4V - ns
VDD
01
23
45
6
0
+1
+2
+3
+4
+5
-1
-2
-3
Volts
(V)
Time(ns)
Undershoot
Ground
Max. area=4.5V-ns
Overshoot
Max. amplitude=1.5V
Figure 1: Address and Control AC Overshoot and Undershoot Definitio
VDD
01
23
45
6
0
+1
+2
+3
+4
+5
-1
-2
-3
Volts
(V)
Time(ns)
Undershoot
Ground
Max. area=2.4V-ns
Overshoot
Max. amplitude=1.2V
Figure 2: DQ/DM/DQS AC Overshoot and Undershoot Definition


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