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P25Q40H Datasheet(PDF) 5 Page - Puya Semiconductor Co., Ltd.

Part # P25Q40H
Description  Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory
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Manufacturer  PUYA [Puya Semiconductor Co., Ltd.]
Direct Link  http://www.puyasemi.com/index_en.html
Logo PUYA - Puya Semiconductor Co., Ltd.

P25Q40H Datasheet(HTML) 5 Page - Puya Semiconductor Co., Ltd.

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P25Q40H/20H/10H/05H Datasheet
Puya Semiconductor
Page 5 of 76
2
Description
The P25Q40H/20H/10H/05H is a serial interface Flash memory device designed for use in a wide variety of
high-volume consumer based applications in which program code is shadowed from Flash memory into
embedded or external RAM for execution. The flexible erase architecture of the device, with its page erase
granularity it is ideal for data storage as well, eliminating the need for additional data storage devices.
The erase block sizes of the device have been optimized to meet the needs of today's code and data storage
applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently.
Because certain code modules and data storage segments must reside by themselves in their own erase
regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash
memory devices can be greatly reduced. This increased memory space efficiency allows additional code
routines and data storage segments to be added while still maintaining the same overall device density.
The device also contains an additional 3*512-byte security registers with OTP lock (One-Time
Programmable), can be used for purposes such as unique device serialization, system-level Electronic Serial
Number (ESN) storage, locked key storage, etc.
Specifically designed for use in many different systems, the device supports read, program, and erase
operations with a wide supply voltage range of 2.3V to 3.6V. No separate voltage is required for programming
and erasing.


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