1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Amplifier Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

2N5400

2N5401

Unit

Collector – Emitter Voltage

VCEO

120

150

Vdc

Collector – Base Voltage

VCBO

130

160

Vdc

Emitter – Base Voltage

VEBO

5.0

Vdc

Collector Current — Continuous

IC

600

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(1)

(IC = 1.0 mAdc, IB = 0)

2N5400

2N5401

V(BR)CEO

120

150

—

—

Vdc

Collector – Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

2N5400

2N5401

V(BR)CBO

130

160

—

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

—

Vdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

2N5400

(VCB = 120 Vdc, IE = 0)

2N5401

(VCB = 100 Vdc, IE = 0, TA = 100°C)

2N5400

(VCB = 120 Vdc, IE = 0, TA = 100°C)

2N5401

ICBO

—

—

—

—

100

50

100

50

nAdc

µAdc

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

IEBO

—

50

nAdc

1. Pulse Test: Pulse Width = 300

ms, Duty Cycle = 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by 2N5400/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

2N5400

2N5401

*Motorola Preferred Device

*

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

COLLECTOR

3

2

BASE

1

EMITTER