FEATURES

• Single Power Supply Operation

- 5.0 V ± 10% Read/Program/Erase

• High Performance Read

- 70/90 ns access time

• Memory Blocks Architecture

- One 16 Kbytes top or bottom Boot Block with

software lockout

- Two 8 Kbytes Parameter Blocks

- One 96 Kbytes Main Block

- Three 128 Kbytes Main Blocks

• Automatic Block Erase and Byte Program

- Typical 12

µs/byte programming

- Typical 50 ms block or chip erase

• Hardware Data Protection

• Data# Polling and Toggle Bit Features

• Low Power Consumption

- Typical 15 mA active read current

- Typical 40 mA program/erase current

- Typical 0.1

µA CMOS standby current

• High Product Endurance

- Guarantee 10,000 program/erase cycles

- Typical 50,000 program/erase cycles

- Minimum 10 years data retention

• Industrial Standard Pin-out and Packaging

- 32-pin Plastic DIP

- 32-pin PLCC

• Manufactured on 0.30 µm process

GENERAL DESCRIPTION

The Pm29F004 is a 4 Megabit, 5 Volt-only Flash Memory organized as 524,288 bytes of 8 bits each. This

device is designed to use a 5.0 Volt power supply to perform in-system programming, 12.0 Volt V

for program and erase operation is not required. The device can be programmed in standard EPROM program-

mers as well.

The 4 Megabit memory array is divided into seven blocks of one 16 Kbytes, two 8 Kbytes, one 96 Kbytes,

and three 128 Kbytes for BIOS and parameters storage. The seven blocks allow users to flexibly make chip erase

or block erase operation. The block erase feature allows a particular block to be erased and reprogrammed

without affecting the data in other blocks. After the device performed chip erase or block erase operation, it can

be reprogrammed on a byte-by-byte basis.

The device has a standard microprocessor interface as well as JEDEC single-power-supply Flash compatible

pin-out and command set. The program operation of Pm29F004 is executed by issuing the program command

code into command register. The internal control logic automatically handles the programming voltage ramp-up

and timing. The erase operation of Pm29F004 is executed by issuing the chip erase or block erase command

code into command register. The internal control logic automatically handles the erase voltage ramp-up and

timing. The preprogramming on the array which has not been programmed is not required before the erase

operation. The device also features Data# Polling and Toggle Bit function, the end of program or erase operation

can be detected by Data# Polling of I/O7 or Toggle Bit of I/O6.

The device has an optional 16 Kbytes top or bottom boot block with a software lockout feature for data

security. The boot block can be used to store user secure code. When the lockout feature is enabled, the boot

block is permanently protected from being reprogrammed.

The Pm29F004 is manufactured on PMC’s advanced 0.30 µm, P-FLASH™, nonvolatile memory process.

The device is packaged in a 32-pin DIP and PLCC with access time of 70 and 90 ns.

PMC

4 Megabit (512K X 8) 5.0 Volt-only CMOS Flash Memory

Programmable Microelectronics Corp.

Issue Date: November, 2000 Rev:1. 0

PRELIMINARY

Pm29F004

1