2N5209 2N5210

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 2. Effects of Frequency

f, FREQUENCY (Hz)

7.0

10

20

30

5.0

Figure 3. Effects of Collector Current

IC, COLLECTOR CURRENT (mA)

Figure 4. Noise Current

f, FREQUENCY (Hz)

Figure 5. Wideband Noise Figure

RS, SOURCE RESISTANCE (OHMS)

3.0

10

NOISE CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C)

NOISE VOLTAGE

20

50 100 200

500 1 k 2 k

5 k 10 k 20 k

50 k 100 k

BANDWIDTH = 1.0 Hz

BANDWIDTH = 1.0 Hz

BANDWIDTH = 1.0 Hz

IC = 10 mA

300

µA

30

µA

RS ≈ 0

3.0 mA

1.0 mA

7.0

10

20

30

5.0

3.0

0.01 0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

RS ≈ 0

f = 10 Hz

100 Hz

1.0 kHz

10 kHz

100 kHz

IC = 10 mA

3.0 mA

1.0 mA

300

µA

100

µA

10

µA

RS ≈ 0

10

10

20

50 100 200

500 1 k 2 k

5 k 10 k 20 k

50 k 100 k

0.1

0.2

0.3

1.0

0.7

2.0

3.0

5.0

7.0

10

20

50 100 200

500 1 k 2 k

5 k 10 k 20 k 50 k 100 k

0

4.0

8.0

12

16

20

BANDWIDTH = 10 Hz to 15.7 kHz

IC = 1.0 mA

500

µA

100

µA

10

µA

100 Hz NOISE DATA

300

200

100

3.0

5.0

7.0

10

20

30

50

70

RS, SOURCE RESISTANCE (OHMS)

10

20

50 100 200

500 1 k 2 k

5 k 10 k 20 k 50 k 100 k

0

4.0

8.0

12

16

20

Figure 6. Total Noise Voltage

BANDWIDTH = 1.0 Hz

IC = 10 mA

3.0 mA

1.0 mA

300

µA

100

µA

30

µA

10

µA

10

20

50 100 200

500 1 k

2 k

5 k 10 k 20 k 50 k 100 k

IC = 10 mA

300

µA

100

µA

30

µA

3.0 mA

1.0 mA

10

µA

BANDWIDTH = 1.0 Hz

RS, SOURCE RESISTANCE (OHMS)

Figure 7. Noise Figure

0.5