2N5209 2N5210

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 100 µAdc, VCE = 5.0 Vdc)

2N5209

2N5210

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

2N5209

2N5210

(IC = 10 mAdc, VCE = 5.0 Vdc)(1)

2N5209

2N5210

hFE

100

200

150

250

150

250

300

600

—

—

—

—

—

Collector – Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

VCE(sat)

—

0.7

Vdc

Base – Emitter On Voltage

(IC = 1.0 mAdc, VCE = 5.0 mAdc)

VBE(on)

—

0.85

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)

fT

30

—

MHz

Collector–Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb

—

4.0

pF

Small–Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

2N5209

2N5210

hfe

150

250

600

900

—

Noise Figure

(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 22 kΩ,

2N5209

f = 1.0 kHz)

2N5210

(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ,

2N5209

f = 1.0 kHz)

2N5210

NF

—

—

—

—

3.0

2.0

4.0

3.0

dB

1. Pulse Test: Pulse Width = 300

ms, Duty Cycle = 2.0%.

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model