Amplifier Transistor

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

50

Vdc

Collector–Base Voltage

VCBO

50

Vdc

Emitter–Base Voltage

VEBO

3.0

Vdc

Collector Current — Continuous

IC

50

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

50

—

Vdc

Collector–Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

V(BR)CBO

50

—

Vdc

Collector Cutoff Current

(VCB = 35 Vdc, IE = 0)

ICBO

—

50

nAdc

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

IEBO

—

50

nAdc

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductort

November, 2001 – Rev. 1

1

Publication Order Number:

2N5087/D

2N5087

ON Semiconductor Preferred Device

CASE 29–11, STYLE 1

TO–92 (TO–226AA)

1

2

3

COLLECTOR

3

2

BASE

1

EMITTER