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2N3906 Datasheet(PDF) 3 Page - ON Semiconductor |
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2N3906 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page 2N3905 2N3906 3 Motorola Small–Signal Transistors, FETs and Diodes Device Data Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit 3 V 275 10 k 1N916 CS < 4 pF* 3 V 275 10 k CS < 4 pF* < 1 ns +0.5 V 10.6 V 300 ns DUTY CYCLE = 2% < 1 ns +9.1 V 10.9 V DUTY CYCLE = 2% t1 0 10 < t1 < 500 ms * Total shunt capacitance of test jig and connectors TYPICAL TRANSIENT CHARACTERISTICS Figure 3. Capacitance REVERSE BIAS (VOLTS) 2.0 3.0 5.0 7.0 10 1.0 0.1 Figure 4. Charge Data IC, COLLECTOR CURRENT (mA) 5000 1.0 VCC = 40 V IC/IB = 10 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 QT QA Cibo Cobo TJ = 25°C TJ = 125°C Figure 5. Turn – On Time IC, COLLECTOR CURRENT (mA) 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 Figure 6. Fall Time IC, COLLECTOR CURRENT (mA) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 VCC = 40 V IB1 = IB2 IC/IB = 20 IC/IB = 10 IC/IB = 10 tr @ VCC = 3.0 V td @ VOB = 0 V 40 V 15 V 2.0 V |
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