1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

40

Vdc

Collector – Base Voltage

VCBO

40

Vdc

Emitter – Base Voltage

VEBO

5.0

Vdc

Collector Current — Continuous

IC

200

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Power Dissipation @ TA = 60°C

PD

250

mW

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS(1)

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to

Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage (2)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

—

Vdc

Collector – Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

40

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

—

Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

IBL

—

50

nAdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

ICEX

—

50

nAdc

1. Indicates Data in addition to JEDEC Requirements.

2. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by 2N3905/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

2N3905

2N3906

*Motorola Preferred Device

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

*

COLLECTOR

3

2

BASE

1

EMITTER

REV 2