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NT5TU64M8EE Datasheet(PDF) 52 Page - Nanya Technology Corporation. |
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NT5TU64M8EE Datasheet(HTML) 52 Page - Nanya Technology Corporation. |
52 / 96 page DDR2 512Mb SDRAM NT5TU64M8EE / NT5TU32M16EG 52 Version 1.0 Nanya Technology Corp.© 09/2014 All Rights Reserved Operating Conditions Absolute Maximum DC Ratings Symbol Parameter Rating Units Notes VDD Voltage on VDD pin relative to VSS -1.0 to + 2.3 V 1,3 VDDQ Voltage on VDDQ pin relative to VSS -0.5 to + 2.3 V 1,3 VDDL Voltage on VDDL pin relative to VSS -0.5 to + 2.3 V 1,3 VIN, VOUT Voltage on any pin relative to VSS -0.5 to + 2.3 V 1,4 TSTG Storage Temperature -55 to + 100 ℃ 1,2 Notes: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. 3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ. When VDD and VDDQ and VDDL are less than 500 mV, Vref may be equal to or less than 300 mV. 4. Voltage on any input or I/O may not exceed voltage on VDDQ. DRAM Component Operating Temperature Range Symbol Parameter Rating Units Notes TOPER Operating Temperature - 40 to 95 ℃ 1,2 Notes: 1. Operating temperature is the case surface temperature (TCASE) on the center/top side of the DRAM. 2. If TC exceeds 85°C, the DRAM must be refreshed externally at 2x refresh. It is required to set tREFI=3.9μs in auto refresh mode and to set ‘1’ for EMRS (2) bit A7 in self refresh mode. |
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