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NT5TU64M8EE Datasheet(PDF) 41 Page - Nanya Technology Corporation.

Part # NT5TU64M8EE
Description  DDR2 512Mb SDRAM
Download  96 Pages
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Manufacturer  NANYA [Nanya Technology Corporation.]
Direct Link  http://www.nanya.com
Logo NANYA - Nanya Technology Corporation.

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DDR2 512Mb SDRAM
NT5TU64M8EE / NT5TU32M16EG
41
Version 1.0
Nanya Technology Corp.©
09/2014
All Rights Reserved
Burst Write with Auto-Precharge
If A10 is high when a Write Command is issued, the Write with Auto-Precharge function is engaged. The DDR2 SDRAM
automatically begins precharge operation after the completion of the write burst plus the write recovery time delay (WR),
programmed in the MRS register, as long as tRAS is satisfied. The bank undergoing Auto-Precharge from the completion of
the write burst may be reactivated if the following two conditions are satisfied.
(1) The last data-in to bank activate delay time (tDAL = WR + tRP) has been satisfied.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
Examples:
Burst Write with Auto-Precharge (tRC Limit): WL = 2, tDAL = 6 (WR = 3, tRP = 3), BL = 4
NOP
NOP
NOP
NOP
NOP
Bank A
Activate
NOP
WRITE
w/AP
T0
T2
T1
T3
T4
T5
T6
T7
NOP
CMD
DQ
BW-AP223
A10 ="high"
tRP
Auto-Precharge Begins
DIN A0 DIN A1 DIN A2 DIN A3
WL = RL-1 = 2
WR
tRCmin.
DQS,
DQS
Completion of the Burst Write
tDAL
>=tRASmin.
CK, CK
Burst Write with Auto-Precharge (tWR + tRP Limit) : WL = 4, tDAL = 6 (tWR = 3, tRP = 3), BL = 4
NOP
NOP
NOP
NOP
NOP
Bank A
Activate
NOP
Posted CAS
WRITE w/AP
T
0
T
3
T
4
T
5
T
6
T
7
T12
NOP
CMD
DQ
BW-AP423
A10 ="high"
tRP
Auto-Precharge Begins
DIN
A0
DIN
A1
DIN
A2
DIN
A3
WL = RL-1 = 4
tWR
>=tRC
T
9
T
8
Completion of the Burst Write
DQS,
DQS
tDAL
>=tRAS
CK, CK


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