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NT5TU64M8EE Datasheet(PDF) 30 Page - Nanya Technology Corporation. |
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NT5TU64M8EE Datasheet(HTML) 30 Page - Nanya Technology Corporation. |
30 / 96 page DDR2 512Mb SDRAM NT5TU64M8EE / NT5TU32M16EG 30 Version 1.0 Nanya Technology Corp.© 09/2014 All Rights Reserved Write Data Mask One write data mask input (DM) pin for each 8 data bits (DQ) will be supported on DDR2 SDRAMs, consistent with the implementation on DDR SDRAMs. It has identical timings on write operations as the data bits, and though used in a uni-directional manner, is internally loaded identically to data bits to insure matched system timing. DM of x16 bit organization is not used during read cycles. Write Data Mask Timing DQS DQS , DQS DQS tDQSH tDQSL tWPRE WPST t DQ Din Din Din Din tDS DH t DM don't care Burst Write Operation with Data Mask: RL = 3 (AL = 0, CL = 3), WL = 2, tWR = 3, BL = 4 NOP NOP NOP NOP NOP WRITE A T0 T2 T1 T3 T4 T5 T6 T7 T9 WL = RL-1 = 2 DM CMD DQ NOP tWR <= tDQSS Precharge Bank A Activate tRP DQS, DQS DM DIN A0 DIN A1 DIN A3 DIN A2 CK, CK |
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