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NT5TU64M8EE Datasheet(PDF) 29 Page - Nanya Technology Corporation. |
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NT5TU64M8EE Datasheet(HTML) 29 Page - Nanya Technology Corporation. |
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29 / 96 page  DDR2 512Mb SDRAM NT5TU64M8EE / NT5TU32M16EG 29 Version 1.0 Nanya Technology Corp.© 09/2014 All Rights Reserved Burst Read followed by Burst Write : RL = 5, WL = (RL-1) = 4, BL = 4 The minimum time from the burst read command to the burst write command is defined by a read-to-write-turn-around time(tRTW), which is 4 clocks in case of BL=4 operation, 6 clocks in case of BL=8 operation. Burst Write followed by Burst Read: RL = 5 (AL = 2, CL = 3), WL = 4, tWTR = 2, BL = 4 NOP NOP NOP NOP NOP READ A Post CAS BWBR CMD DQ NOP DIN A0 DIN A1 DIN A2 DIN A3 AL=2 CL=3 NOP NOP tWTR T0 T2 T1 T3 T4 T5 T6 T7 T8 T9 Write to Read = (CL - 1)+ BL/2 +tWTR(2) = 6 DQS, DQS WL = RL - 1 = 4 RL=5 CK, CK The minimum number of clocks from the burst write command to the burst read command is (CL - 1) +BL/2 + tWTR where tWTR is the write-to-read turn-around time tWTR expressed in clock cycles. The tWTR is not a write recovery time (tWR) but the time required to transfer 4 bit write data from the input buffer into sense amplifiers in the array. Seamless Burst Write Operation: RL = 5, WL = 4, BL = 4 NOP NOP NOP NOP NOP NOP NOP DIN A0 DIN A1 DIN A2 DIN A3 WRITE A Post CAS WL = RL - 1 = 4 WRITE B Post CAS DIN B0 DIN B1 DIN B2 DIN B3 T0 T2 T1 T3 T4 T5 T6 T7 T8 CMD DQ SBR DQS, DQS CK, CK The seamless burst write operation is supported by enabling a write command every BL / 2 number of clocks. This operation is allowed regardless of same or different banks as long as the banks are activated. |
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