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NT5TU64M8EE Datasheet(PDF) 21 Page - Nanya Technology Corporation.

Part # NT5TU64M8EE
Description  DDR2 512Mb SDRAM
Download  96 Pages
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Manufacturer  NANYA [Nanya Technology Corporation.]
Direct Link  http://www.nanya.com
Logo NANYA - Nanya Technology Corporation.

NT5TU64M8EE Datasheet(HTML) 21 Page - Nanya Technology Corporation.

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DDR2 512Mb SDRAM
NT5TU64M8EE / NT5TU32M16EG
21
Version 1.0
Nanya Technology Corp.©
09/2014
All Rights Reserved
Bank Activate Command
The Bank Activate command is issued by holding
CAS and WE high plus CS and RAS low at the rising edge of the clock.
The bank addresses BA0 ~ BA1 are used to select the desired bank. Row addresses A0 through A13 have to be applied.
The Bank Activate command must be applied before any Read or Write operation can be executed. Immediately after the
bank active command, the DDR2 SDRAM can accept a read or write command (with or without Auto-Precharge) on the
following clock cycle. If an R/W command is issued to a bank that has not satisfied the tRCDmin specification, then additive
latency must be programmed into the device to delay the R/W command which is internally issued to the device. The
additive latency value must be chosen to assure tRCDmin is satisfied. Additive latencies of 0, 1, 2, 3, 4, 5, and 6 are supported.
Once a bank has been activated it must be precharged before another Bank Activate command can be applied to the same
bank. The bank active and precharge times are defined as tRAS and tRP, respectively. The minimum time interval between
successive Bank Activate commands to the same bank is determined (tRC). The minimum time interval between Bank
Active commands, to other bank, is the Bank A to Bank B delay time (tRRD).
In order to ensure that 8 bank devices do not exceed the instantaneous current supplying capability of 4 bank devices,
certain restrictions on operation of the 8 bank devices must be observed. There are two rules. One for restricting the
number of sequential ACT commands that can be issued and another for allowing more time for RAS precharge for a
Precharge All command. The rules are list as follow:
* 8 bank device sequential Bank Activation Restriction: No more than 4 banks may be activated in a rolling tFAW window.
Converting to clocks is done by dividing tFAW by tCK and rounding up to next integer value. As an example of the rolling
window, if (tFAW/tCK) rounds up to 10 clocks, and an activate command is issued in clock N, no more than three further
activate commands may be issued in clock N+1 through N+9.
*8 bank device Precharge All Allowance: tRP for a Precharge All command for an 8 Bank device will equal to tRP+tCK,
where tRP is the value for a single bank pre-charge.
Bank Activate Command Cycle: tRCD = 3, AL = 2, tRP = 3, tRRD = 2, tCCD = 2
Address
NOP
Command
T0
T2
T1
T3
T4
Col. Addr.
Bank A
Row Addr.
Bank B
Col. Addr.
Bank B
Internal RAS-CAS delay tRCDmin.
Bank A to Bank B delay tRRD.
Activate
Bank B
Read A
Posted CAS
Activate
Bank A
Read B
Posted CAS
Read A
Begins
Row Addr.
Bank A
Addr.
Bank A
Precharge
Bank A
NOP
Addr.
Bank B
Precharge
Bank B
Row Addr.
Bank A
Activate
Bank A
tRP Row Precharge Time (Bank A)
tRC Row Cycle Time (Bank A)
Tn
Tn+1
Tn+2
Tn+3
ACT
RAS-RAS delay tRRD.
tRAS Row Active Time (Bank A)
additive latency AL=2
CK, CK


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