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NT5TU64M8EE Datasheet(PDF) 1 Page - Nanya Technology Corporation. |
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NT5TU64M8EE Datasheet(HTML) 1 Page - Nanya Technology Corporation. |
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1 / 96 page  DDR2 512Mb SDRAM NT5TU64M8EE / NT5TU32M16EG 1 Version 1.0 Nanya Technology Corp.© 09/2014 All Rights Reserved DDR2 512Mb SDRAM JEDEC DDR2 Compliant - Double-data rate on DQs, DQS, DM bus - 4n Prefetch Architecture Throughput of valid Commands - Posted CAS and Additive Latency (AL) Signal Integrity - Configurable DS for system compatibility - Configurable On-Die Termination Data Integrity - Auto Refresh and Self Refresh Modes Power Saving Modes - Power Down Mode SSTL_18 compliance and Power Supply - VDD/VDDQ = 1.70 to 1.90V Density / Packages information Lead-free RoHS compliance and Halogen-free 512Mb (Org. / Package) Width x Length (mm) Ball pitch (mm) 64 Mb x 8 60 VFBGA 8.00 x 10.00 0.80 32 Mb x 16 84 VFBGA 8.00 x 12.50 0.80 Density and Addressing Configuration 64 Mb x 8 32 Mb x 16 Number of Banks 4 4 Bank Address BA0 – BA1 BA0 – BA1 Auto Precharge A10/AP A10/AP Row Address A0 - A13 A0 - A12 Column Address A0 - A9 A0 – A9 Page Size 1 KB 2 KB Features Options Temperature Range (Tc) 2 - Grade I = - 40 ℃ to + 95℃ Notes: 1. The timing specification of high speed bin is backward compatible with low speed bin. 2. If TC exceeds 85°C, the DRAM must be refreshed externally at 2x refresh. It is required to set tRE FI=3.9μs in auto refresh mode and to set ‘1’ for EMRS (2) bit A7 in self refresh mode. Output Drive Impedance (Full, Reduced) Burst Length (4, 8) Burst Type (Sequential, Interleaved) Rtt (50, 75, 150) Programmable functions CAS Latency (3, 4, 5, 6, 7) Additive Latency (0, 1, 2, 3, 4, 5, 6) WR (2, 3, 4, 5, 6, 7, 8) Speed Grade ( DataRate/CL-tRCD-tRP) 1 - 800 Mbps / 5-5-5 Nanya Technology Corp. NT5TU64M8EE / NT5TU32M16EG NTC has the rights to change any specifications or product without notification. |
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