![]() |
Electronic Components Datasheet Search |
|
NT5TU64M8EE Datasheet(PDF) 9 Page - Nanya Technology Corporation. |
|
|
NT5TU64M8EE Datasheet(HTML) 9 Page - Nanya Technology Corporation. |
9 / 96 page ![]() DDR2 512Mb SDRAM NT5TU64M8EE / NT5TU32M16EG 9 Version 1.0 Nanya Technology Corp.© 09/2014 All Rights Reserved Functional Descriptions The 512Mb DDR2 SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and continue for the burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Activate command, which is followed by a Read or Write command. The address bits registered coincident with the activate command are used to select the bank and row to be accesses (BA0-BA1 select the bank, A0-A13 select the row). The address bits registered coincident with the Read or Write command are used to select the starting column location for the burst access and to determine if the Auto-Precharge command is to be issued. Prior to normal operation, the DDR2 SDRAM must be initialized. The following sections provide detailed information covering device initialization, register definition, command description and device operation. |
Similar Part No. - NT5TU64M8EE |
|
Similar Description - NT5TU64M8EE |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |