NT5TU64M8EE datasheet(60/96 Pages) NANYA

Part #	NT5TU64M8EE

Description	DDR2 512Mb SDRAM

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Manufacturer	NANYA [Nanya Technology Corporation.]

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DDR2 512Mb SDRAM

NT5TU64M8EE / NT5TU32M16EG

60

Version 1.0

Nanya Technology Corp.©

09/2014

IDD Measurement Conditions

IDD values are for full operating range of Voltage and Temperature

Symbol

Parameter/Condition

IDD0

Operating one bank active-precharge current;

tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD);

CKE is HIGH,

CS is HIGH between valid commands;

Address bus inputs are SWITCHING;

Data bus inputs are SWITCHING

IDD1

Operating one bank active-read-precharge current;

IOUT = 0mA;

BL = 4, CL = CL(IDD), AL = 0;

tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD);

CKE is HIGH,

CS is HIGH between valid commands;

Address bus inputs are SWITCHING;

Data pattern is same as IDD4W

IDD2P

Precharge power-down current;

All banks idle;

tCK = tCK(IDD);

CKE is LOW;

Other control and address bus inputs are STABLE;

Data bus inputs are FLOATING

IDD2N

Precharge standby current;

All banks idle;

tCK = tCK(IDD);

CKE is HIGH,

CS is HIGH;

Other control and address bus inputs are SWITCHING;

Data bus inputs are SWITCHING

IDD2Q

Precharge quiet standby current;

All banks idle;

tCK = tCK(IDD);

CKE is HIGH,

CS is HIGH;

Other control and address bus inputs are STABLE;

Data bus inputs are FLOATING

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