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WNM5002 Datasheet(PDF) 2 Page - Will Semiconductor Ltd.

Part # WNM5002
Description  Small Signal N-Channel, 50V, 0.50A, MOSFET
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Manufacturer  WILLSEMI [Will Semiconductor Ltd.]
Direct Link  http://www.willsemi.com/index.php?siteid=2
Logo WILLSEMI - Will Semiconductor Ltd.

WNM5002 Datasheet(HTML) 2 Page - Will Semiconductor Ltd.

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Will Semiconductor Ltd.
2
2015/04/24 – Rev.1.0
WNM5002
Absolute Maximum ratings
Thermal resistance ratings
a
Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b
Surface mounted on FR-4 board using minimum pad size, 1oz copper
c
Pulse width<380µs, Duty Cycle<2%
d
Maximum junction temperature TJ=150°C.
Parameter
Symbol
10 S
Steady State
Unit
Drain-Source Voltage
VDS
50
V
Gate-Source Voltage
VGS
±
20
Continuous Drain Current a d
TA=25°C
ID
0.50
0.44
A
TA=70°C
0.40
0.35
Maximum Power Dissipation a d
TA=25°C
PD
0.69
0.53
W
TA=70°C
0.44
0.34
Continuous Drain Current b d
TA=25°C
ID
0.47
0.42
A
TA=70°C
0.38
0.33
Maximum Power Dissipation b d
TA=25°C
PD
0.60
0.47
W
TA=70°C
0.39
0.30
Pulsed Drain Current c
IDM
1.2
A
Operating Junction Temperature
TJ
-55 to 150
°C
Lead Temperature
TL
260
°C
Storage Temperature Range
Tstg
-55 to 150
°C
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient Thermal Resistance a
t ≤ 10 s
RθJA
140
180
°C/W
Steady State
176
232
Junction-to-Ambient Thermal Resistance b
t ≤ 10 s
RθJA
165
205
Steady State
198
261
Junction-to-Case Thermal Resistance
Steady State
RθJC
100
120


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