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WNM5002 Datasheet(PDF) 2 Page - Will Semiconductor Ltd. |
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WNM5002 Datasheet(HTML) 2 Page - Will Semiconductor Ltd. |
2 / 7 page Will Semiconductor Ltd. 2 2015/04/24 – Rev.1.0 WNM5002 Absolute Maximum ratings Thermal resistance ratings a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width<380µs, Duty Cycle<2% d Maximum junction temperature TJ=150°C. Parameter Symbol 10 S Steady State Unit Drain-Source Voltage VDS 50 V Gate-Source Voltage VGS ± 20 Continuous Drain Current a d TA=25°C ID 0.50 0.44 A TA=70°C 0.40 0.35 Maximum Power Dissipation a d TA=25°C PD 0.69 0.53 W TA=70°C 0.44 0.34 Continuous Drain Current b d TA=25°C ID 0.47 0.42 A TA=70°C 0.38 0.33 Maximum Power Dissipation b d TA=25°C PD 0.60 0.47 W TA=70°C 0.39 0.30 Pulsed Drain Current c IDM 1.2 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Parameter Symbol Typical Maximum Unit Junction-to-Ambient Thermal Resistance a t ≤ 10 s RθJA 140 180 °C/W Steady State 176 232 Junction-to-Ambient Thermal Resistance b t ≤ 10 s RθJA 165 205 Steady State 198 261 Junction-to-Case Thermal Resistance Steady State RθJC 100 120 |
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