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WNM5002 Datasheet(PDF) 1 Page - Will Semiconductor Ltd. |
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WNM5002 Datasheet(HTML) 1 Page - Will Semiconductor Ltd. |
1 / 7 page ![]() WNM5002 Will Semiconductor Ltd. 1 2015/04/24 – Rev.1.0 WNM5002 Small Signal N-Channel, 50V, 0.50A, MOSFET Features Trench Technology Supper high density cell design Excellent ON resistance for higher DC current HBM ESD protection >2 kV Small package SOT-23 Applications Driver: Relay, Solenoid, Lamps,Hammers etc. Power supply converters circuit Load/Power Switching for potable device Http://www.willsemi.com SOT-23 Pin configuration (Top view) NF2 = Device Code * = Month (A~Z) Marking Order information VDS (V) Typical Rds(on) (Ω) 50 1.3@ VGS=10V 1.4@ VGS=4.5V 2.1@ VGS=2.5V ESD Rating: 2000V HBM Device Package Shipping WNM5002-3/TR SOT-23 3000/Reel&Tape D S 1 2 3 G D S G Descriptions The WNM5002 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in small signal switch. Standard Product WNM5002 is Pb-free and Halogen-free. |
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