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110602

FEATURES

§ 10 years minimum data retention in the

absence of external power

§ Data is automatically protected during power

loss

§ Unlimited write cycles

§ Low-power CMOS operation

§ Read and write access times as fast as 100ns

§ Lithium energy source is electrically

disconnected to retain freshness until power is

applied for the first time

§ Optional industrial (IND) temperature range

of -40

°C to +85°C

PIN ASSIGNMENT

PIN DESCRIPTION

A0–A19

- Address Inputs

DQ0–DQ7

- Data In/Data Out

CE

- Chip Enable

WE

- Write Enable

OE

- Output Enable

- Power (+3.3V)

GND

- Ground

NC

- No Connect

DESCRIPTION

The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as

1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control

the lithium energy source is automatically switched on and write protection is unconditionally enabled to

prevent data corruption. There is no limit on the number of write cycles that can be executed and no

additional support circuitry is required for microprocessor interfacing.

DS1265W

3.3V 8Mb Nonvolatile SRAM

www.maxim-ic.com

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35

36-Pin Encapsulated Package

740mil Extended

A18

A14

A7

A6

A5

A4

A3

A2

A0

A1

A19

NC

A15

A17

WE

A13

A8

A9

A11

OE

A10

DQ7

CE

36

34

33

32

31

30

29

28

27

26

25

23

24

NC

A16

A12

NC

DQ0

DQ1

15

16

22

21

DQ6

DQ5

17

18

GND

DQ2

DQ3

DQ4

19

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