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06035J0R7ABSTR Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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06035J0R7ABSTR Datasheet(HTML) 2 Page - TriQuint Semiconductor |
2 / 8 page TAT7472A1F CATV 75 Ω pHEMT Dual RF Amplifier Datasheet: Rev D 06-08-15 - 2 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Absolute Maximum Ratings Parameter Rating Storage Temperature −55 to 150 °C Device Voltage (VDD) +8V Total Device Current (IDD=IDDA+IDDB) 400 mA Device Current per Amp (IDDA or IDDB) 200 mA Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units Device Voltage (VDD) 5.0 V Device Current (IDD) 270 320 370 mA(†) Case Temperature −40 +85 °C Tj for 106 hours MTTF +150 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications − Single Ended in 50 Ohms Test conditions unless otherwise noted: VCC = +5 V, Temp = +25 °C, 50 Ω System Parameter Conditions Min Typ Max Units Operational Frequency Range 50 1200 MHz Test Frequency 800 MHz Gain 18 dB Output IP3 Pout = 5 dBm/tone, ∆f=10 MHz, 800 MHz +40 dBm Device Current (IDDA or IDDB) 135 163 185 mA Typical Performance − Push-Pull Configuration in 75 Ohms Test conditions unless otherwise noted: VCC = +5 V, Temp.= +25 °C, 75 Ω System. Parameter Conditions Typical Value Units Frequency 50 250 450 860 1210 MHz Gain 15 15 15 15.4 15.4 dB Input Return Loss 22 25 23 16 15 dB Output Return Loss 20 22 21 16 13 dB CTB +41 dBmV / channel 80 channels + 108 QAM, Flat Loading. 270 mA < IDD < 320 mA −78 −76 −74 - - dBc CSO −82 −83 −80 - - dBc CCN 68.5 67.5 65 - - dBc Output P1dB +24.5 +24.5 +24.7 +24.5 23.5 dBm Output IP3 Pout= +8 dBm / tone, Δf=10 MHz +45 +45 +45 +44 +40(2) dBm ACPR 62 dBmV output, 1ch 69 68 67.5 64 58(2) dBc Noise Figure 2.2 2.3 2.4 2.5 2.7 dB Total Device Current, IDD 320 mA Thermal Resistance, θjb(1) Junction to base 15 °C/W Notes: 1. The thermal resistance is referenced from the hottest point of the device junction to the ground paddle 2. Improves with higher Vdd – see performance plots on page 7 |
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