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06035J0R7ABSTR Datasheet(PDF) 1 Page - TriQuint Semiconductor |
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06035J0R7ABSTR Datasheet(HTML) 1 Page - TriQuint Semiconductor |
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1 / 8 page  TAT7472A1F CATV 75 Ω pHEMT Dual RF Amplifier Datasheet: Rev D 06-08-15 - 1 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com SOIC-8 Package Applications Edge QAM Gain Stage MDU Output RF Distribution Amplifiers AH22 Replacement Product Features 75 Ω, 50 MHz to 1218 MHz Bandwidth Low Noise Figure: < 3 dB pHEMT Device Technology SOIC-8 Package Enhanced Gain and Bandwidth Adjustable Bias Functional Block Diagram 1 2 3 4 8 7 6 5 RF OUT / VDD A N/C N/C RF OUT / VDD B RF IN / VG A N/C N/C RF IN / VG B Backside Pad - RF/DC GND Pin 1 Reference Mark A B Pin Configuration Pin No. Label 1 RFIN / VG A 2, 3, 6, 7 GND 4 RFIN / VG B 5 RFOUT / VDD B 8 RFOUT / VDD A Backside Pad RF/DC GND General Description The TAT7472A1F is a 75 Ω RF Amplifier designed for CATV use, but capable of operation up to 1218 MHz. The TAT7472 A1F contains two separate amplifiers for push pull applications. It is fabricated using 6-inch GaAs pHEMT technology to optimize performance and cost. Each amplifier contains on-chip active biasing. The bias current set point of each amplifier is adjustable with a single resistor from the input to ground. Typical supply voltage is +5 V, IMD performance and bandwidth can be enhanced with +5.5 V and +6 V operation. Ordering Information Part No. Description TAT7472A1F 75 Ω Dual pHEMT Amplifier TAT7472A1F-EB 50 – 1218 MHz Evaluation Board Standard T/R size = 1000 pieces on a 7 ” reel. GND GND GND GND |
Similar Part No. - 06035J0R7ABSTR |
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