EMB20P03V datasheet(1/5 Pages) EXCELLIANCE

Part #	EMB20P03V

Description	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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Manufacturer	EXCELLIANCE [Excelliance MOS Corp.]

Direct Link	http://www.excelliancemos.com/

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2013/9/18

p.1

EMB20P03V

G

S

D

P‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS ‐30V

RDSON (MAX.)

20mΩ

ID ‐18A

UIS, Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

VGS

±25

V

Continuous Drain Current

TC = 25 °C

ID

‐18

A

TC = 100 °C ‐13

Pulsed Drain Current

1

IDM ‐72

Avalanche Current

IAS ‐10

Avalanche Energy

L = 0.1mH, ID=‐10A, RG=25Ω

EAS

5

mJ

Repetitive Avalanche Energy

2

L = 0.05mH

EAR

2.5

Power Dissipation

TA = 25 °C

PD

2.5

W

TA = 100 °C

1

Operating Junction & Storage Temperature Range

Tj, Tstg ‐55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

RJC

6

°C / W

Junction‐to‐Ambient

3

RJA

50

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

350°C / W when mounted on a 1 in2 pad of 2 oz copper.

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EMB20P03V Datasheet(PDF) 1 Page - Excelliance MOS Corp.

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