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EMB20P03V Datasheet(PDF) 5 Page - Excelliance MOS Corp. |
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EMB20P03V Datasheet(HTML) 5 Page - Excelliance MOS Corp. |
5 / 5 page ![]() 2013/9/18 p.5 EMB20P03V Q ‐ Gate Charge( nC ) Gate Charge Characteristics 0 0 2 4 g 5 10 I = ‐ 10A 6 8 10 D 20 15 25 ‐ 15V DS V = ‐ 5V ‐ 10V ‐ V , Drain‐Source Voltage( V ) 0 0 400 800 DS 5 10 Coss Crss 1200 1600 2000 Ciss 25 15 20 30 GS f = 1 MHz V = 0 V Capacitance Characteristics DC ‐V ‐ Drain‐Source Voltage( V ) Maximum Safe Operating Area V = ‐10V Single Pulse R = 50°C/W T = 25°C 0.1 0.01 0.1 DS 1 JA A GS R Li mi t 1 10 100 DS (O N) 10s 10 100 100μs 10ms 100ms 1s 1ms ‐1 t ,Time (sec) Transient Thermal Response Curve 10 0.001 ‐4 0.01 0.02 10 ‐3 10 ‐2 10 Single Pulse 0.01 Duty Cycle = 0.5 0.1 0.1 0.05 0.2 1 P θ JA 4.R (t)=r(t) + R 3.T ‐ T = P * R (t) θ JA 2.R = 50°C/W 1.Duty Cycle,D = DM 1 1 10 J 1000 100 t1 t2 θ JA θ JA A t2 t1 Notes: 20 0 10 30 40 50 Single Pulse R = 50°C/W T = 25°C A θJA 0.001 0.01 0.1 100 10 1 1000 Single Pulse Maximum Power Dissipation |
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