EMB20P03V datasheet(2/5 Pages) EXCELLIANCE

Part #	EMB20P03V

Description	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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Manufacturer	EXCELLIANCE [Excelliance MOS Corp.]

Direct Link	http://www.excelliancemos.com/

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2 / 5 page

2013/9/18

p.2

EMB20P03V

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP

MAX

STATIC

Drain‐Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = ‐250A

‐30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = ‐250A

‐1 ‐1.5

‐3

Gate‐Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

VDS = 0V, VGS = ±25V

±500

Zero Gate Voltage Drain Current

IDSS

VDS = ‐24V, VGS = 0V

‐1

A

VDS = ‐20V, VGS = 0V, TJ = 125 °C

‐10

On‐State Drain Current

1

ID(ON)

VDS = ‐5V, VGS = ‐10V ‐18

A

Drain‐Source On‐State Resistance

1

RDS(ON)

VGS = ‐10V, ID = ‐10A

17.5

20

mΩ

VGS = ‐4.5V, ID = ‐7A

26

35

Forward Transconductance

1

gfs

VDS = ‐5V, ID = ‐10A

24

S

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = ‐15V, f = 1MHz

1407

pF

Output Capacitance

Coss

208

Reverse Transfer Capacitance

Crss

164

Gate Resistance

Rg

VGS = 15mV, VDS = 0V, f = 1MHz

4.5

Ω

Total Gate Charge

1,2

Qg(VGS=10V)

VDS = ‐15V, VGS = ‐10V,

ID = ‐10A

20.3

nC

Qg(VGS=4.5V)

9.8

Gate‐Source Charge

1,2

Qgs

3.2

Gate‐Drain Charge

1,2

Qgd

4.9

Turn‐On Delay Time

1,2

td(on)

10

nS

Rise Time

1,2

tr

VDS = ‐15V,

8

Turn‐Off Delay Time

1,2

td(off)

ID = ‐1A, VGS = ‐10V, RGS = 2.7Ω

25

Fall Time

1,2

tf

6

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

IS

‐3.5

A

Pulsed Current

3

ISM

‐14

Forward Voltage

1

VSD

IF = IS A, VGS = 0V

‐1.2

V

Reverse Recovery Time

trr

IF = IS, dlF/dt = 100A / S

32

nS

Reverse Recovery Charge

Qrr

26

nC

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