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2SB817C Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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2SB817C Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 2 page 2SB817C/2SD1047C No.0000-2/2 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the author ities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2001. Specifications and information herein are subject to change without notice. PS Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Gain-Bandwidth Product fT VCE=(--)5V, IC=(--)1A (10)15 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (280)140 pF Base-to-Emitter Voltage VBE VCE=(--)5A, IC=(--)5A 1.5 V Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)5A, IB=(--)0.5A (-- 0.3)0.2 (--)2.0 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)5mA, IE=0 (--)160 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)50mA, RBE=∞ (--)140 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)5mA, IC=0 (--)6 V Turn-On Time ton See specified Test Circuit. (0.45)0.56 µs Storage Time tstg See specified Test Circuit. (1.75)3.3 µs Fall Time tf See specified Test Circuit. (0.25)0.4 µs Switching Time Test Circuit VR RB VCC=50V VBE= --2V + + 50Ω INPUT OUTPUT RL= 10Ω 100µF 470µF PW=20µs IB1 D.C.≤1% IB2 IC=10IB1= --10IB2=5A For PNP, the polarity is reversed. |
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