2SB817C/2SD1047C

No.0000-1/2

Features

•

Large current capacitance.

•

Wide ASO and high durability against breakdown.

•

Adoption of MBIT process.

Specifications

( ) : 2SB817C

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

(--)160

V

Collector-to-Emitter Voltage

VCEO

(--)140

V

Emitter-to-Base Voltage

VEBO

(--)6

V

Collector Current

IC

(--)12

A

Collector Current (Pulse)

ICP

(--)20

A

Collector Dissipation

PC

2.5

W

Tc=25°C

120

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=(--)160V, IE=0

(--)0.1

mA

Emitter Cutoff Current

IEBO

VEB=(--)4V, IC=0

(--)0.1

mA

DC Current Gain

hFE1VCE=(--)5V, IC=(--)1A

100

200

hFE2VCE=(--)5V, IC=(--)5A

35

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6987

2SB817C/2SD1047C

140V / 12A, AF 80W Output Applications

HD 030710DA SAWADA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

PNP Epitaxial Planar Silicon Transistor

NPN Triple Diffused Planar Silicon Transistor

Package Dimensions

unit : mm

2022A

[2SB817C/2SD1047C]

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PB

15.6

14.0

1.6

1.0

2.0

0.6

3.2

4.8

2.0

0.6

5.45

5.45

1

2

3